Competition between negative and positive photoconductivity in silicon planar-doped GaAs

This publication has 14 references indexed in Scilit:

• Observation of persistent photoconductivity in delta -doped GaAs
  Semiconductor Science and Technology, 1992
• Observation of persistent negative photoconductivity effect in AlGaAs/GaAs modulation-doped structures
  Physical Review Letters, 1991
• Broadening of the Si doping layer in planar-doped GaAs in the limit of high concentrations
  Solid State Communications, 1991
• Pressure experiments and self-consistent modelling of the transport properties in delta -doped AlGaAs layers
  Semiconductor Science and Technology, 1991
• Negative charge state of theDXcenter inAlxGa1−xAs:Si
  Physical Review Letters, 1991
• Two-dimensional persistent photoconductivity and magnetic freeze-out in lightly “δ”-doped InP
  Surface Science, 1990
• The DX Center: Evidence for Charge Capture Via an Excited Intermediate State
  MRS Proceedings, 1989
• Observation of a new thermally induced photoluminescence emission in silicon-doped Al0.3Ga0.7As
  Solid State Communications, 1988
• Decay kinetics of persistent photoconductivity in semiconductors
  Physical Review B, 1986
• Nonexponential Relaxation of Conductance near Semiconductor Interfaces
  Physical Review Letters, 1985