Optically detected magnetic resonance studies of neutron-transmutation-doped GaP

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Abstract
A direct proof of neutron transmutation doping (NTD) of GaP is presented on the basis of optically detected magnetic resonance (ODMR). GaP:S samples grown by the liquid‐ encapsulated Czochralski method were irradiated with thermal neutrons and subsequently annealed at 800 °C. In the ODMR experiments the transmuted Ge substitutional on Ga sites was detected. The NTD process was also found to create deep acceptors; these are tentatively identified as associates of gallium vacancies (VGa) and germanium donors on gallium sites (GeGa). Such identification requires that some of the structural defects (vacancies) created by β and γ recoil during transmutation are stabilized by forming VGa‐ GeGa complexes.