On the failure mechanisms of titanium nitride/titanium silicide barrier contacts under high current stress
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2151-2159
- https://doi.org/10.1109/16.8789
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Electromigration in Aluminum to Tantalum Silicide Contacts8th Reliability Physics Symposium, 1986
- Performance of titanium nitride diffusion barriers in aluminum–titanium metallization schemes for integrated circuitsJournal of Vacuum Science & Technology A, 1985
- Elimination of Silicon Electromigration in Contacts by the use of an Interposed Barrier MetalPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Electro-Thermomigration in NMOS LSI DevicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- Electro-thermomigration in Al/Si, Au/Si interdigitized test structuresJournal of Applied Physics, 1973