Calculation of electron density in planar-doped high electron mobility transistors

This publication has 21 references indexed in Scilit:

• Electronic transport of the delta -doping layer in the dilute density limit
  Semiconductor Science and Technology, 1989
• Selectively δ-doped quantum well transistor grown by gas-source molecular-beam epitaxy
  Journal of Applied Physics, 1988
• 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz
  IEEE Electron Device Letters, 1988
• Quantum size effect in monolayer-doped heterostructures
  Physical Review B, 1988
• Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
  Applied Physics A, 1988
• A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET
  IEEE Electron Device Letters, 1988
• Selectively δ-doped AlxGa1−xAs/GaAs heterostructures with high two-dimensional electron-gas concentrations n2DEG≥1.5×1012 cm−2 for field-effect transistors
  Applied Physics Letters, 1987
• GaAs structures with electron mobility of 5×106 cm2/V s
  Applied Physics Letters, 1987
• Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layer
  Solid State Communications, 1986
• Photoconductivity in selectively n- and p-doped AlxGa1−xAs/GaAs heterostructures
  Solid-State Electronics, 1986