Transport and Reaction Behaviors of Precursors during Metalorganic Vapor Phase Epitaxy of Gallium Nitride
- 1 November 1999
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 176 (1) , 693-698
- https://doi.org/10.1002/(sici)1521-396x(199911)176:1<693::aid-pssa693>3.0.co;2-z
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A reaction-transport model for AlGaN MOVPE growthJournal of Crystal Growth, 1998
- Optically pumped InGaN/GaN double heterostructurelasers with cleaved facetsElectronics Letters, 1998
- Competitive adsorption effects in the metalorganic vapor phase epitaxy of GaNApplied Physics Letters, 1997
- GaN Growth by Metallorganic Vapor Phase Epitaxy: A Comparison of Modeling and Experimental MeasurementsJournal of the Electrochemical Society, 1997
- AlGaN/GaN HEMTs grown on SiC substratesElectronics Letters, 1997
- A study of parasitic reactions between NH3 and TMGa or TMAIJournal of Electronic Materials, 1996
- Parasitic Reactions between Alkyls and Ammonia in OMVPEMRS Proceedings, 1995