Competitive adsorption effects in the metalorganic vapor phase epitaxy of GaN
- 6 October 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (14) , 1990-1992
- https://doi.org/10.1063/1.119764
Abstract
The growth mechanisms of GaN grown on a GaN buffer deposited onto sapphire substrates are studied here. The growth rate was measured at different temperatures versus ammonia flow and was found to decrease with increasing NH 3 flow. This surprising behavior is modeled in terms of competitive adsorption of species on the growing surface. Very good agreement is obtained between the model and the experimental data.Keywords
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