The interaction of stoichiometry, mechanical stress, and interface trap density in LPCVD Si-rich SiNx;Si structures
- 1 October 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (10) , 1695-1704
- https://doi.org/10.1016/0038-1101(94)90216-x
Abstract
No abstract availableKeywords
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