Encapsulation and annealing studies of semi- insulating InP
- 1 February 1987
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 146 (3) , 221-231
- https://doi.org/10.1016/0040-6090(87)90429-9
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Si- and Mg-implanted InP, GaInAs and short-time proximity cap annealingJournal of Electronic Materials, 1985
- Capless annealing of InP for metal-insulator-semiconductor field-effect transistor applicationsApplied Physics Letters, 1984
- The role of defects in the diffusion and activation of impurities in ion implanted semiconductorsJournal of Electronic Materials, 1984
- Chromium and Manganese Redistribution in Semi‐insulating GaAsJournal of the Electrochemical Society, 1984
- Thin film encapsulants for annealing GaAs and InPThin Solid Films, 1983
- Iron and Chromium Redistribution in Semi‐Insulating InPJournal of the Electrochemical Society, 1981
- Close-contact annealing of ion-implanted GaAs and InPApplied Physics Letters, 1980
- Implantation and PH 3 Ambient Annealing of InPJournal of the Electrochemical Society, 1978
- The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditionsJournal of Physics D: Applied Physics, 1974
- The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam techniqueJournal of Physics and Chemistry of Solids, 1973