Thin film encapsulants for annealing GaAs and InP
- 1 January 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 103 (1-3) , 17-26
- https://doi.org/10.1016/0040-6090(83)90421-2
Abstract
No abstract availableThis publication has 72 references indexed in Scilit:
- Photoluminescence studies of 4He- and 9Be-implanted semi-insulating InPJournal of Applied Physics, 1982
- Ion Implantation in Compound Semiconductor ResearchIEEE Transactions on Nuclear Science, 1981
- Photoluminescence from Mg-implanted, epitaxial, and semi-insulating InPJournal of Applied Physics, 1981
- Ion implantation in III–V compoundsRadiation Effects, 1980
- Thermal degradation of InP and its control in LPE growthJournal of Applied Physics, 1979
- N-type doping of indium phosphide by implantationSolid-State Electronics, 1978
- Ion-implanted n- and p-type layers in InPApplied Physics Letters, 1977
- Thermally converted surface layers in semi-insulating GaAsApplied Physics Letters, 1977
- The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditionsJournal of Physics D: Applied Physics, 1974
- The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam techniqueJournal of Physics and Chemistry of Solids, 1973