Characterization of inversion and accumulation layer electron transport in 4H and 6H-SiC MOSFETs on implanted P-type regions

This publication has 14 references indexed in Scilit:

• Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
  IEEE Electron Device Letters, 2001
• A novel 6H-SiC power DMOSFET with implanted p-well spacer
  IEEE Electron Device Letters, 1999
• Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's
  IEEE Transactions on Electron Devices, 1999
• Detailed investigation of n-channel enhancement 6H-SiC MOSFETs
  IEEE Transactions on Electron Devices, 1999
• Lateral n-channel inversion mode 4H-SiC MOSFETs
  IEEE Electron Device Letters, 1998
• Effects of Channel Mobility on SiC Power Metal-Oxide-Semiconductor Field Effect Transistor Performance
  Japanese Journal of Applied Physics, 1996
• SiC MOS interface characteristics
  IEEE Transactions on Electron Devices, 1994
• An improved method of MOSFET modeling and parameter extraction
  IEEE Transactions on Electron Devices, 1987
• Disorder-induced carrier localization in silicon surface inversion layers
  Applied Physics Letters, 1974
• Experimental Verification of the Surface Quantization of ann-Type Inversion Layer of Silicon at 300 and 77°K
  Physical Review B, 1972