Carrier concentration and transport in Hg1−xZnxTe for x near 0.15
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 682-688
- https://doi.org/10.1016/0022-0248(90)90795-m
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- (Hg,Zn)Te: A new material for IR detectionJournal of Crystal Growth, 1988
- Band gap in Hg1-x ZnxTe solid solutionsJournal de Physique, 1987
- Growth and characterization of bulk HgZnTe crystalsJournal of Crystal Growth, 1986
- Light-modulated Hall effect for extending characterization of semiconductor materialsJournal of Applied Physics, 1986
- Growth of Hg1−xZnxTe by molecular beam epitaxy on a GaAs(100) substrateApplied Physics Letters, 1985
- Mercury zinc telluride, a new narrow-gap semiconductorApplied Physics Letters, 1985
- Effects influencing the structural integrity of semiconductors and their alloysJournal of Vacuum Science & Technology A, 1985
- Calcul de la variation de mobilité des électrons dans PbTe type n entre 50 et 300 KJournal de Physique, 1985
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper DopedJournal of the Electrochemical Society, 1981
- Mobility of electrons in Hg1−xCdxTeJournal of Applied Physics, 1974