Influence of nonuniform charge distribution in In0.53Ga0.47As on the interpretation of dopant incorporation
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 450-455
- https://doi.org/10.1016/0022-0248(91)91018-6
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- AlGaAs/GaAs double-heterojunction high electron mobility transistors grown by low-pressure organometallic vapor phase epitaxyJournal of Applied Physics, 1990
- Measurement of 2DEG Parameters by Low‐Magnetic‐Field Hall TechniquesJournal of the Electrochemical Society, 1989
- Analysis of multiband conduction in HgTe by magnetic‐field‐dependent Hall techniquesJournal of Vacuum Science & Technology A, 1988
- Determination of electrical transport properties using a novel magnetic field-dependent Hall techniqueJournal of Applied Physics, 1987
- Measurement of GaAs surface oxide desorption temperaturesApplied Physics Letters, 1987
- The growth of high mobility InGaAs and InAlAs layers by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Heavily Si-doped InGaAs lattice-matched to InP grown by MBEElectronics Letters, 1986
- Factors affecting the growth of an integrated Ga1−xInxAs/InP PIN–FET by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Electrical and optical properties of Si- and Sn-doped InxGa1−xAs (x≂0.53) grown by molecular beam epitaxyJournal of Applied Physics, 1984
- Interface effects with Ga0.47In0.53As layers on InP substrates prepared by organometallic chemical vapor depositionThin Solid Films, 1983