Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of water
- 1 June 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 262 (1-2) , 52-59
- https://doi.org/10.1016/0040-6090(94)05809-1
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- FTIR Studies of the Adsorption/Desorption Behavior of Cu Chemical Vapor Deposition Precursors on Silica: IV . Interaction of (1,1,1,5,5,5‐hexafluoroacetylacetonato)(2‐butyne)copper(I), and (1,1,1,5,5,5,‐hexafluoroacetylacetonato)(vinyltrimethylsilane)copper(I), with Passivated Silica Surfaces and Comparison to Selective CVD of CuJournal of the Electrochemical Society, 1994
- FTIR Studies of the Adsorption/Desorption Behavior of Cu Chemical Vapor Deposition Precursors on Silica: III . Re‐examination of (1,1,1,5,5,5‐hexafluoroacetylacetonato)(vinyltrimethylsilane)copper(I),Journal of the Electrochemical Society, 1994
- FTIR Studies of the Adsorption/Desorption Behavior of Copper Chemical Vapor Deposition Precursors on Silica. 1. Bis(1,1,1,5,5,5-hexafluoroacetylacetonato)copper(II)The Journal of Physical Chemistry, 1994
- FTIR Studies of the Adsorption/Desorption Behavior of Copper Chemical Vapor Deposition Precursors on Silica. 2. (1,1,1,5,5,5-Hexafluoroacetylacetonato)(2-butyne)copper(I)The Journal of Physical Chemistry, 1994
- Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vaporApplied Physics Letters, 1993
- Selective and blanket copper chemical vapor deposition for ultra-large-scale integrationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Control of selectivity during chemical vapor deposition of copper from copper (I) compounds via silicon dioxide surface modificationApplied Physics Letters, 1992
- Selectivity and Copper Chemical Vapor DepositionJournal of the Electrochemical Society, 1992
- Selective electroless copper for VLSI interconnectionIEEE Electron Device Letters, 1989
- Metallization for very-large-scale integrated circuitsThin Solid Films, 1982