Electron Beam Vacuum Lithography Using a Plasma Co-Polymerized MMA–TMT Resist
- 1 May 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (5R)
- https://doi.org/10.1143/jjap.21.768
Abstract
The dry development of an Sn containing electron-beam-sensitive resist produced by plasma polymerization is described. The dry development was performed using self-development, with good results. In order to raise the e-beam sensitivity for self development, a little metal was added to an organic resist. It was found that a plasma co-polymerized methyl methacrylate tetramethyltin resist “PP (MMA–TMT)” had a sensitivity of 20 µC/cm2 and a γ value of 3.Keywords
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