Nmos Transistors Fabricated by Simultaneous Laser-Assisted Crystallization and Diffusion on Silicon on Electro-Optic PLZT

This publication has 9 references indexed in Scilit:

• Silicon photodetector integrated on a lithium tantalate substrate
  Applied Physics Letters, 1984
• MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate
  IEEE Electron Device Letters, 1981
• cw laser assisted diffusion and activation of tin in GaAs from a SnO2/SiO2 source
  Journal of Applied Physics, 1981
• cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties
  Applied Physics Letters, 1978
• p-n junction formation in boron-deposited silicon by laser-induced diffusion
  Applied Physics Letters, 1978
• Arsenic diffusion in silicon melted by high-power nanosecond laser pulsing
  Applied Physics Letters, 1978
• Field-effects in polycrystalline-silicon films
  Solid-State Electronics, 1972
• Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
  Solid-State Electronics, 1968
• Principles of Optics. By Max Born and Emil Wolf. Pp. 803 120s. 1959. (Pergamon Press)
  The Mathematical Gazette, 1961