Characterization of SiO/sub 2/ dielectric breakdown for reliability simulation
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (9) , 1662-1668
- https://doi.org/10.1109/16.231572
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdownPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Building-in reliability: making it workPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Evolution of VLSI reliability engineeringQuality and Reliability Engineering International, 1991
- High-frequency time-dependent breakdown of SiO/sub 2/IEEE Electron Device Letters, 1991
- On the breakdown statistics of very thin SiO2 filmsThin Solid Films, 1990
- Modeling and characterization of gate oxide reliabilityIEEE Transactions on Electron Devices, 1988
- Accelerated testing of time-dependent breakdown of SiO2IEEE Electron Device Letters, 1987
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985
- Time-Zero Dielectric Reliability Test by a Ramp Method8th Reliability Physics Symposium, 1981
- Method of Determining Reliability Screens for Time Dependent Dielectric BreakdownPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979