Influence of the boundary between monocrystalline and polycrystalline silicon on the electrical characteristics of diodes grown by differential MBE
- 1 May 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (5) , 365-369
- https://doi.org/10.1088/0268-1242/6/5/009
Abstract
The differential MBE technique is suggested as a tool for separation or interconnection of advanced devices on a common chip. Bipolar diodes with various diameters of 23 to 800 mu m were fabricated and their electrical behaviour measured. Implantation of etching methods were used to eliminate the influence of a highly doped contact layer on top of the epitaxial layer sequence. Leakage currents from 10-7 to 10-9 A are slightly higher than those of reference mesa diodes. It is estimated that the differential technique is applicable to many advanced devices for planar integration.Keywords
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