Experimental and theoretical characteristics of high performance pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As/InAlAs HEMT's

This publication has 16 references indexed in Scilit:

• V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's
  IEEE Transactions on Microwave Theory and Techniques, 1993
• 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
  IEEE Transactions on Electron Devices, 1992
• A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT
  IEEE Microwave and Guided Wave Letters, 1991
• High-current lattice-strained In0.59Ga0.41As/In0.52Al0.48As modulation-doped field-effect transistors grown by molecular beam epitaxy
  Applied Physics Letters, 1990
• Submicron double heterojunction strained InAlAs/InGaAs HEMTs: an experimental study of DC and microwave properties
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990
• Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design
  IEEE Electron Device Letters, 1989
• Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs
  IEEE Transactions on Electron Devices, 1989
• 35-GHz performance of single and quadruple power heterojunction HEMT's
  IEEE Transactions on Electron Devices, 1986
• A microwave power double-heterojunction high electron mobility transistor
  IEEE Electron Device Letters, 1985
• Substrate current in GaAs MESFET's
  IEEE Transactions on Electron Devices, 1979