Defect localization induced by hot carrier injection in short-channel MOSFETs: Concept, modeling and characterization
- 1 July 1993
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 33 (9) , 1365-1385
- https://doi.org/10.1016/0026-2714(93)90137-n
Abstract
No abstract availableThis publication has 50 references indexed in Scilit:
- Hot-carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFETSIEEE Electron Device Letters, 1991
- Hot carrier hardness analysis of submicrometer LDD devicesIEEE Transactions on Electron Devices, 1991
- Computer simulation of hot-carrier effects in asymmetric LDD and LDS MOSFET devicesIEEE Transactions on Electron Devices, 1989
- Effects of localized interface defects caused by hot-carrier stress in n-channel MOSFETs at low temperatureIEEE Electron Device Letters, 1988
- Electron energy distribution for calculation of gate leakage current in MOSFETsSolid-State Electronics, 1988
- Lateral distribution of hot-carrier-induced interface traps in MOSFETsIEEE Transactions on Electron Devices, 1988
- Simulation of hot-electron trapping and aging of nMOSFETsIEEE Transactions on Electron Devices, 1988
- A hot-carrier analysis of submicrometer MOSFET'sIEEE Electron Device Letters, 1988
- The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET'sIEEE Transactions on Electron Devices, 1987
- Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear regionIEEE Transactions on Electron Devices, 1987