Hot carrier hardness analysis of submicrometer LDD devices
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (3) , 512-517
- https://doi.org/10.1109/16.75160
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- A new self-consistent modeling approach to investigating MOSFET degradationIEEE Electron Device Letters, 1990
- Interface trap transformation in radiation or hot-electron damaged MOS structuresSemiconductor Science and Technology, 1989
- Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injectionApplied Surface Science, 1989
- Drain-engineered hot-electron-resistant device structures: a reviewIEEE Transactions on Electron Devices, 1989
- Trap creation in silicon dioxide produced by hot electronsJournal of Applied Physics, 1989
- Hot-carrier effects in n-channel MOS transistors under alternating stress conditionsIEEE Electron Device Letters, 1988
- Hot-electron and hole-emission effects in short n-channel MOSFET'sIEEE Transactions on Electron Devices, 1985
- Interface trap generation in silicon dioxide when electrons are captured by trapped holesJournal of Applied Physics, 1983
- Capture cross section and trap concentration of holes in silicon dioxideJournal of Applied Physics, 1976
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971