W/Si1-xGex Schottky Barrier: Effect of Stress and Composition
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The Schottky barrier height of W on Si1-xGex/ Si has been investigated as a function of composition and strain retained in the alloy for a given composition. The barrier height to ntype films does not vary significantly while that to p-type films follows the same trends than the band gap: it decreases with x and the strain. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.Keywords
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