LPE growth and characterization of InGaAsP/InP multiquantum well epitaxial layers
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 78 (3) , 461-467
- https://doi.org/10.1016/0022-0248(86)90148-x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Fabrication and lasing characteristics of 1.3-μm InGaAsP multiquantum-well lasersJournal of Applied Physics, 1986
- Long wavelength InGaAsP (λ∼1.3 μm) modified multiquantum well laserApplied Physics Letters, 1985
- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- InGaAsP/InP multiquantum-well structure grown by MOCVDElectronics Letters, 1985
- A 1.3 µm InGaAsP/InP Multiquantum Well Laser Grown by LPEJapanese Journal of Applied Physics, 1985
- Two-dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Auto-Doping Phenomena for the InGaAsP Active Layer in DH Structure Grown by LPEJapanese Journal of Applied Physics, 1984
- Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sourcesIEEE Journal of Quantum Electronics, 1984
- Quantum-well Inp-Inl−xGaxPl−zAsz heterostructure lasers grown by liquid phase epitaxy (LPE)Journal of Electronic Materials, 1980
- X-ray diffraction study of a one-dimensional GaAs–AlAs superlatticeJournal of Applied Crystallography, 1977