AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's

9 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 727-730
https://doi.org/10.1109/iedm.1991.235320

Abstract

A recently developed model for AC hot carrier degradation is extended to low-temperature operation as well as to ROXNOX (reoxidized nitrided oxide) dielectrics. Three hot carrier damage mechanisms are incorporated into the model: interface states and oxide electron traps created at low gate voltages, interface states created at medium gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under AC stress. The model is shown to be valid at 173 K and 295 K for both typical and worst-case AC stress waveforms found in CMOS circuits. It is also shown to be valid for ROXNOX MOSFETs.

Keywords

This publication has 13 references indexed in Scilit:

A model for AC hot-carrier degradation in n-channel MOSFETs
IEEE Electron Device Letters, 1991
A lifetime prediction method for oxide electron trap damage created during hot-electron stressing of n-MOS transistors
IEEE Electron Device Letters, 1991
Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2or=V/sub d/) during hot-carrier stressing of n-MOS transistors
IEEE Transactions on Electron Devices, 1990
The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETs
IEEE Transactions on Electron Devices, 1990
The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors
IEEE Transactions on Electron Devices, 1990
MOSFET degradation due to hot-carrier effect at high frequencies
IEEE Electron Device Letters, 1990
Hot-carrier effects in n-channel MOS transistors under alternating stress conditions
IEEE Electron Device Letters, 1988
The case of AC stress in the hot-carrier effect
IEEE Transactions on Electron Devices, 1986
Degradation of n-MOS-Transistors after pulsed stress
IEEE Electron Device Letters, 1984
Relationship between MOSFET degradation and hot-electron-induced interface-state generation
IEEE Electron Device Letters, 1984