Investigation of soi material formed by high-dose oxygen and nitrogen implantation
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 220-224
- https://doi.org/10.1016/0168-583x(89)90775-1
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogenApplied Physics Letters, 1985
- CMOS on buried nitride—A VLSI SOI technologyIEEE Transactions on Electron Devices, 1983