The influence of TiB2-thin film thickness on metal–GaAs structural characteristics
- 1 September 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 373 (1-2) , 79-83
- https://doi.org/10.1016/s0040-6090(00)01099-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- TiB2/GaAs and Au-TiB2/GaAs structural transformations at short-term thermal treatmentSemiconductor physics, quantum electronics and optoelectronics, 1999
- Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenideSemiconductor physics, quantum electronics and optoelectronics, 1999
- Structure of deposited and annealed TiB2 layersSurface and Coatings Technology, 1997
- The effect of rapid thermal annealing on structural and electrical properties of TiB2 thin filmsThin Solid Films, 1997
- Electrical properties of high-temperature oxides, borides, carbides, and nitridesJournal of Materials Science, 1995
- Susceptor and proximity rapid thermal annealing of carbon-implanted InPJournal of Vacuum Science & Technology B, 1990
- TiB2 and ZrB2 diffusion barriers in GaAs Ohmic contact technologyJournal of Vacuum Science & Technology A, 1985
- The application of the X-ray triple-crystal spectrometer for measuring the radius of curvature of bent single crystalsPhysica Status Solidi (a), 1976