Epitaxial growth and structural characterization of erbium silicide formed on (100) Si through a solid phase reaction
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 134 (3-4) , 247-254
- https://doi.org/10.1016/0022-0248(93)90133-h
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 19 references indexed in Scilit:
- Effect of atmosphere on decomposition of gadolinium-activated barium titanyl oxalateJournal of Alloys and Compounds, 1993
- An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi2 gateSolid-State Electronics, 1989
- Fabrication and structure of epitaxial Er silicide films on (111) SiApplied Physics Letters, 1989
- Epitaxial Formation of Rare Earth Silicides by Rapid AnnealingMRS Proceedings, 1985
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Geometric factors in f.c.c. and b.c.c. metal-on-metal epitaxy Part II. Deposits of Ni, Cu, Au and Ag on (001) WPhilosophical Magazine A, 1978
- Roles of lattice fitting in epitaxyThin Solid Films, 1978
- Analysis of thin-film structures with nuclear backscattering and x-ray diffractionJournal of Vacuum Science and Technology, 1974
- The growth and transformation of Pd2Si on (111), (110) and (100) SiThin Solid Films, 1973
- Growth Kinetics Observed in the Formation of Metal Silicides on SiliconApplied Physics Letters, 1972