70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers
- 1 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 70 nm gate length metamorphic HEMT technology will be presented. Extrinsic cut-off frequencies of f(ind t)= 293 GHz and f(ind max) = 337 GHz were achieved. The transistors have an on-state breakdown voltage of 1.7 V. A median time to failure of 1x10(exp 6) h at 125 °C and an activation energy of 1.3 eV was extrapolated based on a 10 % g(ind m,max) degradation in air. This is significant less than the 1.8 eV activation energy of our 100 nm gate-length 65 % In process which is probably due to hot electron effects. The MMIC-process obtains high yields on transistor and circuit level. Low-noise amplifiers demonstrate a small signal gain of 13 dB and a noise figure of 2.8 dB at 94 GHz. The achieved results are comparable to state-of-the-art InP-based HEMT technologiesKeywords
This publication has 6 references indexed in Scilit:
- InP HEMT and HBT applications beyond 200 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High reliability of 0.07 μm pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTsPhysica Status Solidi (a), 2003
- Effect of gate metal on reliability of metamorphic HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2001
- Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT'sIEEE Electron Device Letters, 1999
- Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with a novel composite channels designIEEE Electron Device Letters, 1996