Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
Open Access
- 1 August 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (3) , 1948-1950
- https://doi.org/10.1063/1.357652
Abstract
Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov–De Haas oscillations were observed indicating the two-dimensional character of electron transport. A mobility of 20 000 cm2/V s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm−2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine-scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties.This publication has 12 references indexed in Scilit:
- Alloy clustering and defect structure in the molecular beam epitaxy of In0.53Ga0.47As on siliconJournal of Materials Research, 1992
- Achievements and limitations in optimized GaAs films grown on Si by molecular-beam epitaxyJournal of Applied Physics, 1992
- Tem Study of Temperature Influence on The Crystalline Quality of InGaAs/Si EpilayersMRS Proceedings, 1992
- Selective area growth for opto-electronic integrated circuits (OEICs)Materials Science and Engineering: B, 1991
- GaAs-on-Si: Improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high-performance AlGaAs/GaAs selectively doped heterostructure transistors and ring oscillatorsJournal of Applied Physics, 1990
- Defect structure of InxGa1−xAs/GaAs grown on misoriented (100) silicon by molecular beam epitaxyMaterials Letters, 1989
- Growth of InxGa1−xAs On silicon by molecular beam epitaxyMaterials Letters, 1989
- Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTsIEEE Transactions on Electron Devices, 1989
- MBE Growth of Ga1-xInxAs Alloy on Si SubstrateJapanese Journal of Applied Physics, 1987
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980