Preparation of conductive ZnO:Al films by a facing target system with a strong magnetic field
- 1 December 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 253 (1-2) , 9-13
- https://doi.org/10.1016/0040-6090(94)90285-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Transparent conductive ZnO:Al films prepared by the planar magnetron sputtering system with obliquely facing targetsSurface and Coatings Technology, 1993
- Substrate Temperature Dependence of Transparent Conducting Al-Doped ZnO Thin Films Prepared by Magnetron SputteringJapanese Journal of Applied Physics, 1992
- Substrate temperature dependence of electrical properties of ZnO:Al epitaxial films on sapphire (12̄10)Journal of Applied Physics, 1991
- Unbalanced dc magnetrons as sources of high ion fluxesJournal of Vacuum Science & Technology A, 1986
- Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1985
- Optical Properties of Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1985
- Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1984
- High-Energy Neutral Atoms in the Sputtering of ZnOJapanese Journal of Applied Physics, 1981