Thermal ionization energy of Si and Mg in AlGaN
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 528-531
- https://doi.org/10.1016/s0022-0248(98)00345-5
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Strain effect on electronic and optical properties of GaN/AlGaN quantum-well lasersJournal of Applied Physics, 1996
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- AlxGa1-xN-Based Materials and HeterostructuresMRS Proceedings, 1996
- Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Energy band-gap bowing parameter in an AlxGa1−x N alloyJournal of Applied Physics, 1987
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986