Low-temperature impact ionization rates in (111) oriented InP

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Abstract
Impact ionization rates in (111) oriented InP have been derived in the temperature range 77–293 K from photomultiplication data measured on a planar-type InP avalanche diode, and have been compared with those in (100) oriented InP. It has been found that there is no marked difference in electron ionization rates between the 〈111〉 and 〈100〉 orientations. This result confirms that no ballistic impact ionization occurs in InP at the measured electric field range of 4.1×105 V cm≤E≤5.6×105 V cm.