High pressure measurements on AlxGa1−xAs-GaAs (x = 0.5 and 1) superlattices and quantum well heterostructure lasers

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Abstract
Absorption data on AlAs‐GaAs and AlxGa1−xAs‐GaAs superlattices (SL’s) and emission data on AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes subjected to hydrostatic pressure (0–10 kbar) at 300 K are presented. Superlattice absorption data show that the confined‐particle transitions, which partition and ’’label’’ the Γ energy band high above the band edge, all move with the same pressure coefficient of 11.5 meV/kbar. (For bulk GaAs, the pressure coefficient is 12.5 meV/kbar.) The effect of the L indirect minima on the highest observed confined‐particle transitions is small; the effect of the X minima is large. At lower pressures, QWH diodes exhibit a pressure dependence similar to that of the free (unconstrained) SL’s. The data on QWH diodes demonstrate, however, a size‐dependent [Lz(GaAs)p‐n diode heterostructure.