High temperature operation of GaInAsSb/AlGaAsSb double-heterostructure lasers emitting near 2.1 μm
- 1 August 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (5) , 616-617
- https://doi.org/10.1063/1.112249
Abstract
Mesa‐stripe injection lasers have been prepared from liquid phase epitaxial Ga0.88In0.12As0.10Sb0.90/Al0.47Ga0.53 As0.04Sb0.96 double heterostructures having an active zone of n‐type conductivity. These laser diodes could operate pulsed at heatsink temperatures up to 120 °C, and showed high characteristic temperature near ambient (T0≊110 K), comparable with theoretical value.Keywords
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