Depth distributions of sulfur implanted into GaAs as a function of ion energy, ion fluence, and annealing temperature and encapsulation

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Abstract
Depth distributions are shown for sulfur implants into GaAs at energies from 40 to 600 keV and implant fluences from 4×1012 to 4×1016 cm−2. The four Pearson IV moments, including range and range straggle, are tabulated and plotted versus ion energy for these profiles. Redistributed sulfur profiles are shown for these same implants following annealing under three conditions. Annealed profiles are compared with electrical profiles from other work. Fractions of sulfur atoms in various locations are described. Annealed sulfur profiles are shown as a function of temperature for SiO2 and Si3N4 caps.