Atom and carrier depth distributions of beryllium implanted into silicon
- 1 April 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4) , 3003-3009
- https://doi.org/10.1063/1.331041
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Correlation of atomic distribution and implantation induced damage profiles in be-ion implanted SiRadiation Effects, 1980
- The pearson IV distribution and its application to ion implanted depth profilesRadiation Effects, 1980
- TEM structural studies on Se+implanted GaAsRadiation Effects, 1979
- Anomalous migration of fluorine and electrical activation of boron in BF+2-implanted siliconApplied Physics Letters, 1978
- Anomalous migration of ion-implanted Al in SiApplied Physics Letters, 1976
- Determination of deep energy levels in Si by MOS techniquesApplied Physics Letters, 1972
- The application of the ion microprobe analyser to the measurement of the distribution of boron ions implanted into silicon crystalsJournal of Physics D: Applied Physics, 1972
- Piezoresistance and Hole Transport in Beryllium-Doped SiliconJournal of Applied Physics, 1972
- On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique [Letter to the Editor]IBM Journal of Research and Development, 1969
- Beryllium as an acceptor in siliconSolid State Communications, 1968