Improved reflectivity of AlPSb/GaPSb Bragg reflectorfor 1.55 µm wavelength
- 8 December 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (25) , 2138-2139
- https://doi.org/10.1049/el:19941448
Abstract
A high-quality AlPSb/GaPSb Bragg reflector lattice matched to InP was grown by gas-source molecular beam epitaxy, and highly reflective DBR mirrors were obtained by improving both the layer flatness and the compositional uniformity. A reflectivity of over 99% was obtained at 1.6 µm from a 20 pair AlPSb/GaPSb quarter-wave mirror, demonstrating the advantage of using this material system to fabricate long-wavelength surface-emitting lasers.Keywords
This publication has 8 references indexed in Scilit:
- High-reflectance AlPSb/GaPSb distributed Bragg reflectormirrors on InP grown by gas-source molecular beam epitaxyElectronics Letters, 1994
- High reflectivity and low resistance 1.55μm Al 0.65 In 0.35 As/Ga 0.63 In 0.37 As strained quarter wave Bragg reflector stackElectronics Letters, 1993
- GaPSb: A new ternary material for Schottky diode fabrication on InPApplied Physics Letters, 1991
- High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulatorsElectronics Letters, 1989
- High-reflectivity AlAs 0.52 Sb 0.48 /GaInAs(P) distributed Bragg mirror on InP substrate for 1.3–1.55 µm wavelengthsElectronics Letters, 1989
- Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laserIEEE Photonics Technology Letters, 1989
- Effects of fluorine ion implantation on metal‐oxide‐semiconductor devices of silicon‐on‐sapphireApplied Physics Letters, 1988
- Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelengthApplied Physics Letters, 1987