Film-edge-induced dislocation generation in silicon substrates. I. Theoretical model

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Abstract
A theoretical model is presented to predict the Burgers vector and the glide plane of the dislocations generated at thin-film edges on silicon substrates. The model is based on a theoretical analysis of the stress field at the film edge. It is shown that the external force acting upon a dislocation with a known Burgers vector is a linear combination of the stress-field components. In equilibrium the total external glide force is balanced by the counteracting line tension force and the critical glide force, both only depending on the length of the Burgers vector and not on its orientation. The (a/2)〈110〉-type dislocation on which the largest external climb and glide force is exerted will nucleate first and subsequently grow by gliding to its equilibrium shape and position.