Electrical Properties of Al/CaF₂/i-Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Fabricated by Ultrahigh Vacuum Process

This publication has 11 references indexed in Scilit:

• Surface state density distribution of semiconducting diamond films measured from the Al/CaF2/i-diamond metal-insulator-semiconductor diodes and transistors
  Journal of Applied Physics, 1997
• Thin film CaF2 stabilizing effect on single-crystal diamond surface
  Applied Surface Science, 1997
• Hall Effect Measurement and Band Bending Calculation of Hydrogenated Diamond Film Grown by Chemical Vapor Deposition
  Japanese Journal of Applied Physics, 1997
• Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films
  Journal of Applied Physics, 1997
• Observation of Capacitance Hunching at the Flat-Band-Voltage in Boron-Doped Diamond Metal/Insulator/Semiconductor Structure
  Japanese Journal of Applied Physics, 1996
• Hydrogen-terminated diamond surfaces and interfaces
  Surface Science Reports, 1996
• Fermi Level Pinning in Metal-Insulator-Diamond Structures
  Japanese Journal of Applied Physics, 1995
• Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds
  Applied Physics Letters, 1994
• Hydrogenating Effect of Single-Crystal Diamond Surface
  Japanese Journal of Applied Physics, 1992
• High-temperature thin-film diamond field-effect transistor fabricated using a selective growth method
  IEEE Electron Device Letters, 1991