Combined use of ion backscattering and x-ray rocking curves in the analyses of superlattices
- 15 February 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (4) , 2343-2347
- https://doi.org/10.1103/physrevb.31.2343
Abstract
Detailed compositional and structural analyses of superlattices have been carried out by mega-electron-volt backscattering with channeling and with x-ray rocking curves. Through the combined use of the two techniques, depth profiles of strain, composition, and crystalline quality have been determined. An example of an As/GaAs strained-layer-superlattice (SLS) is considered. The thicknesses of the individual periods in these SLS structures were accurately measured by backscattering spectrometry. The values so obtained were used in the detailed calculations of x-ray rocking curves. Excellent agreement between measured and calculated curves was achieved. Transition regions at the interfaces of the various layers in the SLS were also detected and measured by both techniques. The two techniques complement each other and together provide powerful quantitative tools to characterize SLS structures.
Keywords
This publication has 16 references indexed in Scilit:
- Diffusion and interdiffusion in Zn-disordered AlAs-GaAs superlatticesJournal of Electronic Materials, 1984
- Strain measurements by channeling angular scansApplied Physics Letters, 1983
- Superlattice interface and lattice strain measurement by ion channelingPhysical Review B, 1983
- Ion-beam crystallography of InAs-GaSb superlatticesPhysical Review B, 1982
- Strained-layer superlattices from lattice mismatched materialsJournal of Applied Physics, 1982
- Reduction in dislocation densities in the step-graded growth of InGaAs by molecular-beam epitaxyApplied Physics Letters, 1981
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981
- Complex band structure and superlattice electronic statesPhysical Review B, 1981
- X-ray diffraction study of a one-dimensional GaAs–AlAs superlatticeJournal of Applied Crystallography, 1977
- New Transport Phenomenon in a Semiconductor "Superlattice"Physical Review Letters, 1974