Elevated‐temperature 3‐MeV Si and 150‐keV Ge implants in InP:Fe

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Abstract
Variable‐fluence 3‐MeV Si+ and 150‐keV Ge+ implants were performed into InP:Fe at 200 °C. Lattice damage in the material is greatly reduced over comparable room‐temperature (RT) implantations and is rather insensitive to fluence for Si+ implantation in the range of 8 × 1014–5 × 1015 cm−2, and no amorphization occurs. For 8 × 1014‐cm−2 Si+ implantation at 200 °C, the dopant activation is 82% and carrier mobility is 1200 cm2/V s after 875 °C/10‐s annealing, whereas for the RT implantation the corresponding values are 48% and 765 cm2/V s, respectively. The reasons for the improved mobility in the elevated‐temperature implants were investigated using Rutherford‐backscattering spectrometry. At a dose of 8 × 1014 cm−2, the aligned yield after annealing is close to that of a virgin sample, indicating a low concentration of residual damage in the 200 °C implant, whereas the lattice remained highly defective in the RT implanted sample. Elevated‐temperature implantation of Si+ and Pi+ ions was also investigated. Coimplantation did yield an improvement in activation for an implanted fluence of 2 × 1015 cm−2 Si+, but resulted in an inferior lattice quality which degraded the carrier mobility compared to a Si+ (only) implant. For a 1 × 1014‐cm−2 Ge+ implant, the maximum dopant activation is 50% (donor) and the material did not turn p type even after 925 °C annealing.