Polycrystalline aluminum nitride films prepared by laser assisted Al and NH3 reaction
- 1 February 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 109-110, 533-537
- https://doi.org/10.1016/s0169-4332(96)00630-7
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electronic structure and properties of AlNPhysical Review B, 1994
- Room-temperature growth of AlN thin films by laser ablationApplied Physics Letters, 1992
- Remote plasma deposition of aluminum nitrideJournal of Applied Physics, 1991
- Laser-induced chemical vapor deposition of AlN filmsJournal of Applied Physics, 1990
- Infrared and tunneling spectroscopy study of aluminum nitride films prepared by ion-beam depositionThe Journal of Physical Chemistry, 1990
- Effect of nitridation on the density of interface states in W–Ti/n-GaAs Schottky diodesJournal of Vacuum Science & Technology B, 1989
- The intrinsic thermal conductivity of AINJournal of Physics and Chemistry of Solids, 1987
- Basal orientation aluminum nitride grown at low temperature by rf diode sputteringJournal of Applied Physics, 1982
- Aluminum Nitride Epitaxially Grown on Silicon: Orientation RelationshipsJapanese Journal of Applied Physics, 1981
- Backscattering analysis of the composition of silicon-nitride films deposited by rf reactive sputteringJournal of Applied Physics, 1976