Conductance measurements on p-Si/SiO2 metal-oxide-semiconductor capacitors
- 15 February 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (4) , 1980-1986
- https://doi.org/10.1063/1.345577
Abstract
Conductance measurements have been performed on p-Si/SiO2 metal-oxide-semiconductor capacitors fabricated by thermal oxidation of the silicon in three different reactors under different conditions in three different commercial systems. In only one case (system 3) did we find the very broad conductance curves usually associated with p-Si/SiO2 junctions, the others from systems 1 and 2 exhibiting normal interface state response. However, in the sample from system 2, the response of bulk states inside the depletion region was found to distort the Gp/ω spectra, while the sample from system 1 showed no such response until annealing in H2/Ar gas at 500 °C reduced the interface state density to such a level that the bulk state responses were visible. We argue that the presence of bulk states probably explains the very broad Gp/ω curves observed by us, and further propose that some such mechanism accounts for the historical difficulties encountered with the conductance technique on p-Si/SiO2 capacitors.This publication has 14 references indexed in Scilit:
- Characterization of Si-SiO2 interface traps in p-metal-oxide-semiconductor structures with thin oxides by conductance techniqueJournal of Applied Physics, 1987
- Electronic states at the interface between thin films of ZnS and crystalline p-siliconJournal of Applied Physics, 1987
- The contribution of bulk states to the ac conductance of metal-insulator-semiconductor diodesJournal of Applied Physics, 1987
- The relative contributions of recombination and tunnelling at interface states to the a.c. conductance of metal-insulator-semiconductor diodesSolid-State Electronics, 1987
- The density of localized states at the semi-insulating polycrystalline and single-crystal silicon interfaceJournal of Applied Physics, 1986
- Interfacial effects due to tunneling to insulator gap states in amorphous carbon on silicon metal-insulator-semiconductor structuresJournal of Applied Physics, 1984
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCEApplied Physics Letters, 1967
- FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURESApplied Physics Letters, 1966
- The effects of oxide traps on the MOS capacitanceIEEE Transactions on Electron Devices, 1965