Elemental composition of β-Sic(001) surface phases studied by medium energy ion scattering
- 3 May 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 231 (3) , L196-L200
- https://doi.org/10.1016/0039-6028(90)90192-b
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Surface structure of As-stabilized GaAs(001): 2×4,c(2×8), and domain structuresPhysical Review B, 1988
- Summary Abstract: Surface structures of β‐SiC and pseudomorphic Si adlayersJournal of Vacuum Science & Technology A, 1988
- Antiphase boundaries in epitaxially grown β-SiCApplied Physics Letters, 1987
- Temperature dependence of electrical properties of n- and p-type 3C-SiCJournal of Applied Physics, 1987
- Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor depositionJournal of Crystal Growth, 1986
- Scanning tunneling microscopy of Si(001)Physical Review B, 1986
- Ion beam crystallography of surfaces and interfacesSurface Science Reports, 1985
- Surface studies of epitaxial β-SiC on Si(100)Journal of Applied Physics, 1984
- Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculationsPhysical Review B, 1982
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979