Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP
- 1 December 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (12) , 973-978
- https://doi.org/10.1007/bf03030191
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Large modulation depth, single-moded quantum well waveguide modulator operating around 1.57 μmElectronics Letters, 1991
- Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriersElectronics Letters, 1991
- Quantum confined Stark effect in InGaAs/InP and InGaAs/InGaAsP multi quantum well structuresSuperlattices and Microstructures, 1990
- Integration of detectors with GaInAsP/InP carrier depletion optical switchesElectronics Letters, 1990
- Reduction of the propagation losses in impurity disordered quantum well waveguidesElectronics Letters, 1990
- Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxyApplied Physics Letters, 1989
- Multiple quantum well optical waveguides with large absorption edge blue shift produced by boron and fluorine impurity-induced disorderingApplied Physics Letters, 1989
- Very low threshold current density SCH-MQW laser diodes emitting at 1.55µmElectronics Letters, 1989
- A Novel GRIN-SCH-SQW Laser Diode Monolithically Integrated with Low-Loss Passive WaveguidesJapanese Journal of Applied Physics, 1989
- Effect of barrier width on performance of long wavelength GainAs/InP multi-quantum-well lasersElectronics Letters, 1988