A new approach to the “gettering” of oxygen during the growth of GaAlAs by low pressure MOCVD
- 31 October 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (1) , 53-57
- https://doi.org/10.1016/0022-0248(81)90270-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor depositionIEEE Journal of Quantum Electronics, 1979