PHOTOEMISSION STUDIES OF INTERFACE BARRIER ENERGIES OF IRRADIATED MOS STRUCTURES
- 1 July 1970
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (1) , 3-5
- https://doi.org/10.1063/1.1653240
Abstract
The effects of ionizing radiation in large geometry MOS structures were studied by use of internal photoemission techniques. Barrier heights at both the silicon‐silicon dioxide and the silicon dioxide‐metal (chromium) interface were measured before and after irradiation in a Co60 gamma cell. It was determined that the measured barrier energy heights were considerably reduced by radiation‐induced oxide charge.Keywords
This publication has 7 references indexed in Scilit:
- Radiation-induced space-charge buildup in MOS structuresIEEE Transactions on Electron Devices, 1967
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- Photoemission of Electrons from-Type Degenerate Silicon into Silicon DioxidePhysical Review B, 1966
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966
- Photoemission of Electrons from Metals into Silicon DioxideJournal of Applied Physics, 1966
- A model for radiation damage in metal-oxide-semiconductor structuresProceedings of the IEEE, 1966
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965