Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped silicon
- 1 May 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (5) , 251-254
- https://doi.org/10.1088/0268-1242/2/5/001
Abstract
No abstract availableKeywords
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