Evolution of the GaAs(001) Surface Physico-Chemical Characteristics and Electrical Properties of the Si3N4/GaAs Interface with the NH3Photolysis Treatment of the GaAs Surface.
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Chemical vapor deposition of a silicon nitride layer with an excellent interface by NH3 plasma treatmentApplied Physics Letters, 1988
- Angle-resolved X-Ray photoelectron spectroscopy for the characterization of GaAs(OO1) surfacesJournal of Electron Spectroscopy and Related Phenomena, 1987
- Determination of Hydrogen Concentration in PCVD Silicon Nitride Films by Elastic Recoil Detection AnalysisJapanese Journal of Applied Physics, 1987
- Photo-Cvd Silicon Nitride for Gaas Mesfet PassivationMRS Proceedings, 1987
- Core level photoemission study of the interaction of plasmas with real GaAs(100) surfacesSurface Science, 1985
- A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength PhotodetectorsJournal of the Electrochemical Society, 1982
- Hydrogen plasma etching of GaAs oxideApplied Physics Letters, 1981
- Adsorption and Desorption of O2 on GaAs {111} SurfacesJournal of Applied Physics, 1967