Current-voltage characteristics and composition profiles of Ni-Pt silicide Schottky diodes

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Abstract
The forward current‐voltage (If‐Vf) characteristics of (50 wt% Ni– 50 wt% Pt) silicide Schottky diodes, formed in vacuum at 425 °C from rf sputter‐deposited Ni and Pt thin films, were found to be dependent on the metal‐deposition sequence. From the thermionic emission equation an empirical barrier height of 0.70 eV was calculated for diodes formed from 125 Å Pt/325 Å Ni/(111) Si, while diodes formed from 325 Å Ni/125Å Pt/(111) Si had an empirical barrier height of 0.65 eV. The deposition of a thin W‐Ti diffusion marker film on the Si surface before sputter deposition of Ni and Pt layers modified If‐Vf characteristics. Silicide diodes formed from 125 Å Pt/325 Å Ni/(W‐Ti)/(111) Si had an empirical barrier height of 0.66 eV. Diodes formed from 325 Å Ni/125 Å Pt/(W‐Ti)/(111) Si had an empirical barrier height of 0.70 eV. MeV 4He+ backscattering spectra revealed that diodes with similar If‐Vf characteristics had similar Ni and Pt concentration profiles in the silicide film.