Submicrometer Electron-Beam Direct Writing Technology for 1-Mbit DRAM Fabrication
- 1 February 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 20 (1) , 88-93
- https://doi.org/10.1109/jssc.1985.1052280
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A submicron VLSI memory with a 4b-at-a-time built-in ECC circuitPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Pattern Fidelity in Submicron Lithography with a Rectangular Electron BeamJapanese Journal of Applied Physics, 1983
- Poly (phenyl methacrylate-co-methacrylic acid) as a dry-etching durable positive electron resistIEEE Transactions on Electron Devices, 1982
- High precision lithography for submicron VLSI fabricationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Variably shaped electron beam lithography system, EB55: I. System designJournal of Vacuum Science and Technology, 1981
- Variably shaped electron beam lithography system, EB55: II Electron opticsJournal of Vacuum Science and Technology, 1981
- Variable-shaped electron-beam direct writing technology for 1-µm VLSI fabricationIEEE Transactions on Electron Devices, 1981
- Chloromethylated Polystyrene as a Dry Etching‐Resistant Negative Resist for Submicron TechnologyJournal of the Electrochemical Society, 1979
- 1 µm MOSFET VLSI technology: Part VI—Electron-beam lithographyIEEE Transactions on Electron Devices, 1979